PART |
Description |
Maker |
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499 2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P 2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL SIPMOS Power Transistor
|
Infineon Technologies AG
|
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
2SD1980 2SD2195 2SD1867 2SD1980TL |
Power Transistor (100V, 2A) Power Transistor (100V , 2A)
|
ROHM[Rohm]
|
2SB1344 |
POWER TRANSISTOR (-100V, -8A)
|
ROHM[Rohm]
|
ZXTN25100BFHTA ZXTN25100BFH |
100V, SOT23, medium power transistor
|
ZETEX[Zetex Semiconductors]
|
SPU11N10 SPD11N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=179mOhm, 11A, NL SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
STD6N10 STD6N10-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-251 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
ZXTP19100CFF ZXTP19100CFFTA |
2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100V, SOT23F, PNP medium power transistor
|
ZETEX PLC Diodes Incorporated Zetex Semiconductors
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 5A条一(c)| TO - 220AB现有 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC, Corp. NEC Corp.
|